Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization
نویسندگان
چکیده
The barrier properties and diffusion behavior of Cu(Re) alloy films were studied. deposited onto barrierless SiO2/Si by magnetron sputtering. X-ray diffraction patterns electric resistivity results proved that the without a layer thermally stable up to 550 °C. Transmission electron microscopy images energy-dispersive spectrometry employing scanning transmission provided evidence for self-formed Re-enriched between substrate. Furthermore, chemical states Re atoms at Cu(Re)/SiO2 interface analyzed photoemission spectroscopy. was found be composed metal, ReO, ReO2 ReO3. At 650 °C, completely destroyed due atom diffusion. low electrical in combination with high thermal stability suggests could ultimate Cu interconnect barrier.
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ژورنال
عنوان ژورنال: Coatings
سال: 2022
ISSN: ['2079-6412']
DOI: https://doi.org/10.3390/coatings12050613